A novel via blockage model and its implications

Qiang Chen, J.A. Davis, P. Zarkesh-Ha, J. Meindl
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引用次数: 4

Abstract

Via blockage and its impact on wirability of multi-billion transistor chips are systematically analyzed. Along with a new via distribution based on a stochastic interconnect length distribution and on optimal multilevel interconnect network architecture, a physical via blockage model exploiting channel availability is proposed and applied to analyze future multi-level interconnect networks. This model reveals that the most severe via blockage occurs on first metal level, wasting more than 10% and up to about 50% of wiring area. A new perspective on chip size limit imposed by via blockage is also projected for future chips by using the proposed model.
一种新的通孔堵塞模型及其启示
系统分析了通孔堵塞及其对数十亿晶体管芯片接线性的影响。基于随机互连长度分布和最优多级互连网络结构,提出了利用信道可用性的物理通孔阻塞模型,并将其应用于未来多级互连网络的分析。该模型显示,最严重的通孔堵塞发生在第一金属层,浪费超过10%,高达50%的布线面积。利用所提出的模型,展望了未来芯片尺寸限制的新视角。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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