Enhanced gate-controlled-diode current (EGCDC) measurement

Abstract

A technique for the measurement of the gate-controlled-diode-current (GCDC) in short-channel MOS transistors is described. This technique uses the internal bipolar action of the MOS transistor to amplify the GCDC, thereby extending the sensitivity of the measurement. Results of measurements on small geometry devices, as well as on larger devices, are given. A model based on parasitic bipolar transistor action is given for the enhanced gate-controlled diode current (EGCDC).<>