GaN RF device technology and applications, present and future

Abstract

Over the last decade, Gallium Nitride (GaN) has emerged as a mainstream RF technology with disruptive performance potential. Here, we present GaN technology in the context of current commercial RF communications applications as well as future applications. We show state of the art >200W, >75% efficient packaged device performance at 2.14 GHz using a 0.6 μm 48 V technology and apply the device technology to a 400 W ultra-small footprint Doherty power amplifier. We also describe extending the 0.6 μm technology to a 0.2 μm gate length that allows for higher fT that will enable future technology for high-efficiency switch-mode amplifiers.