The Simplest Stacked BST Capacitor For The Future DRAMs Using A Novel Low Temperature Growth Enhanced Crystallization

Abstract

The simplest stacked capacitor with BST thinner films (about 50nm-thick) grown by a novel low temperature growth [ 11 was demonstrated. The storage node without sidewall spacer was constructed by thinner Ru-layer, sputtered-TiN diffusion barrier, TiSix electrical contact layer and poly-Si plug. The low temperature BST growth prevented the leakage current increase of BST films as thin as 25nm. Therefore, 50% step coverage BST-capacitor was performed as sidewall-less simple stacked capacitors with large storage charge.