{"title":"Broadband THz spectroscopic imaging based on a fully-integrated 4×2 Digital-to-Impulse radiating array with a full-spectrum of 0.03–1.03THz in silicon","authors":"M. Assefzadeh, A. Babakhani","doi":"10.1109/VLSIT.2016.7573401","DOIUrl":null,"url":null,"abstract":"This paper presents a broadband THz frequency-comb spectroscopic imager based on a fully-integrated 4×2 picosecond Direct Digital-to-Impulse (D2I) radiating array. By employing a novel trigger-based beamforming architecture, the chip performs coherent spatial combining of broadband radiated pulses and achieves an SNR>1 BW of 1.03THz (at the receiver) with a pulse peak EIRP of 30dBm. Time-domain radiation is characterized using a fsec-laser-based THz sampler and a pulse width of 5.4ps is measured. Spectroscopic imaging of metal, plastic, and cellulose capsules (empty and filled) are demonstrated. This chip achieves signal generation with an available full-spectrum of 0.03-1.03THz. The 8-element single-chip array is fabricated in a 90nm SiGe BiCMOS process.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
This paper presents a broadband THz frequency-comb spectroscopic imager based on a fully-integrated 4×2 picosecond Direct Digital-to-Impulse (D2I) radiating array. By employing a novel trigger-based beamforming architecture, the chip performs coherent spatial combining of broadband radiated pulses and achieves an SNR>1 BW of 1.03THz (at the receiver) with a pulse peak EIRP of 30dBm. Time-domain radiation is characterized using a fsec-laser-based THz sampler and a pulse width of 5.4ps is measured. Spectroscopic imaging of metal, plastic, and cellulose capsules (empty and filled) are demonstrated. This chip achieves signal generation with an available full-spectrum of 0.03-1.03THz. The 8-element single-chip array is fabricated in a 90nm SiGe BiCMOS process.