Broadband THz spectroscopic imaging based on a fully-integrated 4×2 Digital-to-Impulse radiating array with a full-spectrum of 0.03–1.03THz in silicon

M. Assefzadeh, A. Babakhani
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引用次数: 12

Abstract

This paper presents a broadband THz frequency-comb spectroscopic imager based on a fully-integrated 4×2 picosecond Direct Digital-to-Impulse (D2I) radiating array. By employing a novel trigger-based beamforming architecture, the chip performs coherent spatial combining of broadband radiated pulses and achieves an SNR>1 BW of 1.03THz (at the receiver) with a pulse peak EIRP of 30dBm. Time-domain radiation is characterized using a fsec-laser-based THz sampler and a pulse width of 5.4ps is measured. Spectroscopic imaging of metal, plastic, and cellulose capsules (empty and filled) are demonstrated. This chip achieves signal generation with an available full-spectrum of 0.03-1.03THz. The 8-element single-chip array is fabricated in a 90nm SiGe BiCMOS process.
基于全集成4×2数字脉冲辐射阵列的宽带太赫兹光谱成像,全光谱范围为0.03 - 1.03太赫兹
本文提出了一种基于全集成4×2皮秒直接数字脉冲(D2I)辐射阵列的宽带太赫兹频梳光谱成像仪。通过采用一种新颖的基于触发器的波束形成架构,该芯片实现了宽带辐射脉冲的相干空间组合,在接收机处实现了1.03THz的信噪比bbb1bw,脉冲峰值EIRP为30dBm。时域辐射用fsec激光太赫兹采样器进行了表征,测量了5.4ps的脉冲宽度。光谱成像的金属,塑料和纤维素胶囊(空和填充)演示。该芯片在0.03-1.03太赫兹的可用全频谱范围内实现信号生成。该8元单芯片阵列采用90nm SiGe BiCMOS工艺制造。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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