CVD Cu technology development for advanced Cu interconnect applications

Abstract

An advanced chemical vapor deposition Cu technology has been developed for 0.13 /spl mu/m Cu interconnect generation and beyond. Aggressive Cu via filling capability was successfully proved by CVD direct fill or CVD/ECD integration for via CD<0.1 /spl mu/m with AR>10. High via chain (20 K) yield and low resistance (<0.9/spl Omega//via) of 0.28 /spl mu/m borderless via were also achieved. Via filling and integration related issues including adhesion, texture, and CMP compatibility were also studied and resolved. Excellent filling capability, adequate adhesion and good [111] texture of the proposed CVD Cu based process exhibit superior extendibility toward sub-0.13 /spl mu/m technology node.