Realizing steep subthreshold swing with Impact Ionization Transistors

Y. Yeo
{"title":"Realizing steep subthreshold swing with Impact Ionization Transistors","authors":"Y. Yeo","doi":"10.1109/VTSA.2009.5159284","DOIUrl":null,"url":null,"abstract":"Recent developments in Impact Ionization Transistors (I-MOS) will be discussed here, including strained impact ionization transistors realized on the nanowire or multiple-gate device architecture. I-MOS devices achieve excellent subthreshold swings well below 5 mV/decade at room temperature. Techniques for enhancing impact ionization rate and reducing the breakdown voltage VBD for device performance improvement will be discussed. Challenges faced by I-MOS will be highlighted. Some challenges may be addressed through the strain and materials engineering. Limitations of the I-MOS will also be discussed.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159284","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Recent developments in Impact Ionization Transistors (I-MOS) will be discussed here, including strained impact ionization transistors realized on the nanowire or multiple-gate device architecture. I-MOS devices achieve excellent subthreshold swings well below 5 mV/decade at room temperature. Techniques for enhancing impact ionization rate and reducing the breakdown voltage VBD for device performance improvement will be discussed. Challenges faced by I-MOS will be highlighted. Some challenges may be addressed through the strain and materials engineering. Limitations of the I-MOS will also be discussed.
用冲击电离晶体管实现陡峭亚阈值摆幅
本文将讨论冲击电离晶体管(I-MOS)的最新发展,包括在纳米线或多栅极器件结构上实现的应变冲击电离晶体管。I-MOS器件在室温下实现了极好的亚阈值振荡,远低于5 mV/ 10年。讨论了提高冲击电离率和降低击穿电压以提高器件性能的技术。将重点介绍I-MOS面临的挑战。一些挑战可以通过应变和材料工程来解决。本文还将讨论I-MOS的局限性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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