The Defects of Silicon Reacted with Carbon Content Vapour in ULSI Nano-meter-Generation Technology

Abstract

This investigation considers in detail a defect called "silicon substrate damaged defects" and also introduces these defects' forming mechanisms and their root causes. These defects are likely to become increasing important in the future of deep-sub micrometer ULSI's situation. Two conditions typically result in silicon damaged defects during manufacturing processes namely: (1) watermark with carbon content and (2) the electrical charges accumulated on the silicon wafer surface.