An AlN-based high temperature package for SiC devices: materials and processing

Abstract

SiC-based electronics have the potential for reliable operations at higher junction temperatures, power densities, and frequencies than those can be achieved with Si devices. At present the development of SiC devices for use at temperatures up to 500/spl deg/C has been well underway for various applications. However, currently available packages are not capable of working at such high temperature. Therefore, it is needed to develop a high temperature package to fit the needs of SiC devices. In this paper, we present our development in AlN-based high temperature packaging technology for SiC devices with a focus on materials and processing of: (1) AlN substrate; and (2) carbon form heatsink.