Single current source electromigration system and its application to copper pillars with tin based solder

A. Trigg, C. T. Chong, Hsiao Hsiang Yao, Yaw Jyh Tzong
{"title":"Single current source electromigration system and its application to copper pillars with tin based solder","authors":"A. Trigg, C. T. Chong, Hsiao Hsiang Yao, Yaw Jyh Tzong","doi":"10.1109/EPTC.2013.6745702","DOIUrl":null,"url":null,"abstract":"The trend towards finer pitch interconnections in current generation microelectronic packaging, coupled with the introduction of 3D chipstacks and high power ICs operating at low voltage have all contributed to increasing current density in conductors to the extent that electromigration is a threat to long term reliability. Traditional electromigration (EM) test systems were designed for back end of line (BEOL) IC interconnect with dimensions of micrometres or less and so typically were limited to a total current of 25 mA per device under test (DUT). However for packaging applications, higher currents, 100mA to 1A, are typically needed to provide sufficient current density to generate electromigration failures. Because the traditional EM test systems use dedicated source-measure units for each individual DUT, they are expensive and cannot easily be modified to provide higher currents or to support different package types. In this paper we describe an alternative approach to package EM testing in which a single current source supports many DUTs while the resistance measurements are obtained using a separate multimeter accessing the DUTs by means of a software controlled switch matrix. This provides a flexible, easily reconfigurable system at a cost of approximately 10% that of a traditional system. Since many reliability test labs already have many of the components needed the cost can be reduced still further.","PeriodicalId":210691,"journal":{"name":"2013 IEEE 15th Electronics Packaging Technology Conference (EPTC 2013)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 15th Electronics Packaging Technology Conference (EPTC 2013)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2013.6745702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The trend towards finer pitch interconnections in current generation microelectronic packaging, coupled with the introduction of 3D chipstacks and high power ICs operating at low voltage have all contributed to increasing current density in conductors to the extent that electromigration is a threat to long term reliability. Traditional electromigration (EM) test systems were designed for back end of line (BEOL) IC interconnect with dimensions of micrometres or less and so typically were limited to a total current of 25 mA per device under test (DUT). However for packaging applications, higher currents, 100mA to 1A, are typically needed to provide sufficient current density to generate electromigration failures. Because the traditional EM test systems use dedicated source-measure units for each individual DUT, they are expensive and cannot easily be modified to provide higher currents or to support different package types. In this paper we describe an alternative approach to package EM testing in which a single current source supports many DUTs while the resistance measurements are obtained using a separate multimeter accessing the DUTs by means of a software controlled switch matrix. This provides a flexible, easily reconfigurable system at a cost of approximately 10% that of a traditional system. Since many reliability test labs already have many of the components needed the cost can be reduced still further.
单电流源电迁移系统及其在锡基焊料铜柱上的应用
当前一代微电子封装中更细间距互连的趋势,加上3D芯片堆栈和低电压高功率ic的引入,都有助于增加导体中的电流密度,以至于电迁移对长期可靠性构成威胁。传统的电迁移(EM)测试系统是为线后端(BEOL) IC互连设计的,尺寸为微米或更小,因此通常限制在每个被测器件(DUT)的总电流为25 mA。然而,对于封装应用,通常需要更高的电流,100mA到1A,以提供足够的电流密度来产生电迁移故障。由于传统的电磁测试系统为每个单独的被测件使用专用的源测量单元,因此它们价格昂贵,并且不易修改以提供更高的电流或支持不同的封装类型。在本文中,我们描述了一种封装电磁测试的替代方法,其中单个电流源支持多个被测件,而电阻测量是使用通过软件控制开关矩阵访问被测件的单独万用表获得的。这提供了一个灵活、易于重新配置的系统,其成本约为传统系统的10%。由于许多可靠性测试实验室已经拥有所需的许多组件,因此成本可以进一步降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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