TiN production and performance as a barrier layer in ULSI technology

Abstract

Information is presented on reactively sputter-deposited TiN films used as a barrier layer in the production of ULSI-level DRAMS. Titanium, TiN, and aluminium step coverage data are shown for ULSI level topology. Standby current and junction leakage current data are presented for device structures as a function of air exposure of the TiN films before subsequent aluminium deposition and post TiN deposition anneal treatments. Improvements in reactive sputter deposition equipment for production of TiN films, various methods reported in the literature, and the mechanisms operative in the production of reactively sputtered TiN are discussed. Issues related to steady-state production of ULSI semiconductor devices using TiN are described. Techniques for reducing particulate generation in the TiN deposition module are discussed, and TiN particulate data are presented.<>