{"title":"Thermal Reliability of Cu/low -κ(Black-DiamondTM, BD) Interconnects on Flexible Organic Substrate","authors":"H.Y. Li, J. Bai, H. Chua, L.H. Guo, G. Lo","doi":"10.1109/IPFA.2006.251010","DOIUrl":null,"url":null,"abstract":"This paper reports burn-in test results of Cu/low-K (BD) interconnects on flexible organic substrate (FR-4,0.1mm) and Si substrate. The electrical yields of via chains (via number: 11,182, via size: 0.26 to 0.5 mum) onto flexible organic substrate remain more than 50% and surviving via chains exhibit average resistance shift of 7.3% which is comparable to Si substrate (6.8%) after 524hrs (388hrs/75degC and 136hrs/150degC) burn-in tests","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2006.251010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper reports burn-in test results of Cu/low-K (BD) interconnects on flexible organic substrate (FR-4,0.1mm) and Si substrate. The electrical yields of via chains (via number: 11,182, via size: 0.26 to 0.5 mum) onto flexible organic substrate remain more than 50% and surviving via chains exhibit average resistance shift of 7.3% which is comparable to Si substrate (6.8%) after 524hrs (388hrs/75degC and 136hrs/150degC) burn-in tests