Thermal Reliability of Cu/low -κ(Black-DiamondTM, BD) Interconnects on Flexible Organic Substrate

H.Y. Li, J. Bai, H. Chua, L.H. Guo, G. Lo
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Abstract

This paper reports burn-in test results of Cu/low-K (BD) interconnects on flexible organic substrate (FR-4,0.1mm) and Si substrate. The electrical yields of via chains (via number: 11,182, via size: 0.26 to 0.5 mum) onto flexible organic substrate remain more than 50% and surviving via chains exhibit average resistance shift of 7.3% which is comparable to Si substrate (6.8%) after 524hrs (388hrs/75degC and 136hrs/150degC) burn-in tests
柔性有机衬底上Cu/low -κ(Black-DiamondTM, BD)互连的热可靠性
本文报道了Cu/low-K (BD)互连在柔性有机衬底(FR-4,0.1mm)和硅衬底上的烧蚀试验结果。通孔链(通孔数:11,182,通孔尺寸:0.26至0.5 μ m)在柔性有机衬底上的电导率保持在50%以上,并且在524小时(388小时/75摄氏度和136小时/150摄氏度)的烧蚀测试后,幸存的通孔链表现出7.3%的平均电阻位移,与硅衬底(6.8%)相当
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