{"title":"Room temperature fabrication of semiconductor interfaces","authors":"N. Razek, C. Flötgen, V. Dragoi, M. Wimplinger","doi":"10.23919/LTB-3D.2017.7947419","DOIUrl":null,"url":null,"abstract":"A new technology was developed allowing for room temperature covalent bonding. The surface preparation method allows for in situ native oxides removal and fabrication of oxide-free bonded interfaces which could be directly used in fabrication of various devices (e.g. solar cells).","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/LTB-3D.2017.7947419","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A new technology was developed allowing for room temperature covalent bonding. The surface preparation method allows for in situ native oxides removal and fabrication of oxide-free bonded interfaces which could be directly used in fabrication of various devices (e.g. solar cells).