AIDE (Angle-Implanted Drain and Emitter): A BiCMOS technology module for mixed-signal applications

Abstract

Increased mixed-signal device performance and reliability in a BiCMOS technology is achieved by using Angle-Implanted Drain and Emitter (AIDE) technology. An order of magnitude increase in lifetime is obtained in MOS/BJT transistors, while a >40% increase in transistor gain is achieved. This technology module is applicable to existing BiCMOS process with minimum increase in process complexity.