Kinetics of Thermocompression Bonding to Organic Contaminated Gold Surfaces

J. Jellison
{"title":"Kinetics of Thermocompression Bonding to Organic Contaminated Gold Surfaces","authors":"J. Jellison","doi":"10.1109/TPHP.1977.1135191","DOIUrl":null,"url":null,"abstract":"The kinetics of thermocompression gold ball bonding were studied for gold metallization contaminated with organic films. The contaminants studied were residual photoresist and atmospheric contamination. For gold metallization contaminated with organic films, thermo-compression gold bonding is a two-stage process. The first stage occurs within a fraction of a second and results from the mechanical disruption of barrier films by shear displacements at the faying surface. Bonding during this initial stage is a strong function of the interface temperature, the bonding force, and the contaminant films. The second stage involves growth of the metal-metal interfaces by a sintering phenomenon. Growth of bonds by sintering also occurs in the absence of external loads though at a decreased rate. Analysis of the rate data leads to the conclusion that the growth mechanism follows a parabolic rate law and, in the absence of external loads, exhibits an activation energy of approximately 11 kcal/mole. Under high external loads, the rate of second-stage growth exhibited little temperature dependence, indicative of a stress-assisted process. Bond growth rates for the atmospherically contaminated metallization were an order of magnitude higher than that for the photoresist contaminated samples.","PeriodicalId":387212,"journal":{"name":"IEEE Transactions on Parts, Hybrids, and Packaging","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"38","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Parts, Hybrids, and Packaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TPHP.1977.1135191","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 38

Abstract

The kinetics of thermocompression gold ball bonding were studied for gold metallization contaminated with organic films. The contaminants studied were residual photoresist and atmospheric contamination. For gold metallization contaminated with organic films, thermo-compression gold bonding is a two-stage process. The first stage occurs within a fraction of a second and results from the mechanical disruption of barrier films by shear displacements at the faying surface. Bonding during this initial stage is a strong function of the interface temperature, the bonding force, and the contaminant films. The second stage involves growth of the metal-metal interfaces by a sintering phenomenon. Growth of bonds by sintering also occurs in the absence of external loads though at a decreased rate. Analysis of the rate data leads to the conclusion that the growth mechanism follows a parabolic rate law and, in the absence of external loads, exhibits an activation energy of approximately 11 kcal/mole. Under high external loads, the rate of second-stage growth exhibited little temperature dependence, indicative of a stress-assisted process. Bond growth rates for the atmospherically contaminated metallization were an order of magnitude higher than that for the photoresist contaminated samples.
有机污染金表面热压键合动力学
研究了有机膜污染的金金属化过程中热压金球键合动力学。所研究的污染物为残留光刻胶和大气污染。对于被有机膜污染的金金属化,热压缩金键合是一个两阶段的过程。第一阶段发生在几分之一秒内,是由于表面剪切位移对屏障膜的机械破坏造成的。在这一初始阶段的键合是界面温度、键合力和污染膜的强烈函数。第二阶段是通过烧结现象使金属-金属界面生长。在没有外部载荷的情况下,键的烧结生长也会发生,尽管速度会降低。对速率数据的分析得出结论,生长机制遵循抛物线速率定律,在没有外部载荷的情况下,其活化能约为11千卡/摩尔。在高外部载荷下,第二阶段生长速率表现出很少的温度依赖性,表明应力辅助过程。大气污染金属化的键生长速率比光刻胶污染样品的键生长速率高一个数量级。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信