Evaluation of quasi-hermetic packaging solutions for active microwave devices and space applications

W. Ben Naceur, N. Malbert, N. Labat, H. Frémont, J. Muraro, P. Monfraix
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引用次数: 4

Abstract

A methodology is proposed to estimate the actual influence of important factors during steady-state Temperature Humidity Bias (THB) aging tests on SiN-passivated MMICs: temperature-humidity effects, bias conditions and protection by silica-filled epoxy resins dispensed by a dam-and-fill process. In this work, accelerated aging tests on microwave devices used for space applications were carried out, with or without bias. After 3000 hours of storage at 85°C/85%RH, there was no catastrophic failure. Only devices with PHEMT showed electrical degradations of some DC electrical parameters after 1000 hours of test. In another 1600 hours series of tests, bias parameter was added. Devices with PHEMT exhibited electrical breakdowns, especially under reverse biasing of the gate-source junction and before the required 1000 hours of test. The failed parts were localized by surface observation using optical and scanning electron microscopy. The failure electrical signatures were correlated by electrical simulations. In order to prepare future investigation on encapsulated devices, it was determined moisture diffusivity and content at saturation of commercial dam and fill resins. The actual protection time and the effects of bias conditions of encapsulated MMICs during THB tests were specified. These parameters can be taken into account for further analysis of the reliability of encapsulated active microwave devices for space applications.
有源微波器件和空间应用的准密闭封装方案的评价
提出了一种方法来评估稳态温度-湿度偏置(THB)老化试验中重要因素的实际影响:温度-湿度效应、偏置条件和填坝法填充二氧化硅环氧树脂的保护。在这项工作中,对用于空间应用的微波装置进行了加速老化试验,有或无偏差。在85°C/85%RH下储存3000小时后,没有发生灾难性故障。经过1000小时的测试,只有PHEMT设备的某些直流电气参数出现了电气退化。在另外1600小时的一系列试验中,增加了偏置参数。具有PHEMT的器件表现出电气击穿,特别是在栅极-源结的反向偏置和所需的1000小时测试之前。利用光学显微镜和扫描电镜对失效部位进行了表面定位。通过电学模拟,对失效电特征进行了关联。为了为后续封装装置的研究做准备,测定了商品坝料和填料树脂的湿扩散率和饱和含量。给出了封装mmic在THB测试时的实际保护时间和偏置条件的影响。这些参数可用于进一步分析用于空间应用的封装有源微波器件的可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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