A spill over effect of avalanche generated electrons in buried pMOSFETs

Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI:10.1109/VLSIT.1990.111013

A. Hiroki, S. Odanaka, T. Morii

引用次数: 1

Abstract

Hot carrier effects of a buried pMOSFET in the retrograde n-well have been investigated. A new phenomenon, a spill-over effect of avalanche-generated electrons into the bulk, was discovered. This effect is inherent in pMOSFETs fabricated in the n-well with high doping. It is shown that the effect reduces the hot-electron-induced device degradation even with high hot-electron generation

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埋藏式pmosfet中雪崩产生的电子溢出效应

研究了埋置pMOSFET在逆行n阱中的热载子效应。他们发现了一种新的现象，即雪崩产生的电子对物体的溢出效应。这种效应在高掺杂的n阱中制备的pmosfet中是固有的。结果表明，即使在高热电子产生的情况下，该效应也能降低热电子诱导器件的退化

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Technical Papers.1990 Symposium on VLSI Technology

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