Reliability of Substrate Embedded Rectifiers for High Voltage Applications

K. Meier, J. Meyer, F. Schein, D. Sirkeci, A. Ostmann, E. Oertel, H. Westphal, K. Lang, K. Bock
{"title":"Reliability of Substrate Embedded Rectifiers for High Voltage Applications","authors":"K. Meier, J. Meyer, F. Schein, D. Sirkeci, A. Ostmann, E. Oertel, H. Westphal, K. Lang, K. Bock","doi":"10.1109/EPTC47984.2019.9026672","DOIUrl":null,"url":null,"abstract":"As of today, various solutions to handle the dissipating heat of power electronics devices are available. These include the application of heatsinks, overmolding, embedding of components into substrates, use of substrates with embedded metal or ceramic heatsinks or liquid cooling approaches. When it comes to power electronics for high voltages and fast switching the parasitic capacity has to be considered. This parasitic capacity affects the electrical performance and may finally even lead to damage of the device. Embedding of metal heatsinks or mounting a substrate to a metal heatsink can even increase the parasitic capacity and hence, worsen the scenario. In this project a rectifier had to be built suitable for voltages of up to 20 kV and switching frequencies of 100 kHz while achieving a low parasitic capacity of max. 3 pF. High voltage diodes were selected to meet the electrical requirements. To fullfil both the thermal and capacitance demands the diodes were embedded into a substrate made from a highly thermal conductive FR4 material. In addition, the substrate is mounted to a ceramic heatsink to enable a superior cooling but to limit the parasitic capacity at the same time. This setup was characterised for its thermal management behaviour in the as build state. Though the lamination of the substrate to the ceramic heatsink showed some challenges its cooling performance could be assessed. Subsequently, the system without the ceramic heatsink was exposed to temperature shock cycles at −40/+125°C for up to 2,000 cycles to analyse the long term stability of the system behaviour. For the repeated investigation of the thermal behaviour and the structural integrity of the system a novel analysis approach using an infrared camera was applied. Cross sections were done in addition to verify the results from the novel thermal analysis approach. As of now no thermo-mechanical damage of the rectifier could be observed proving the ability of the embedding approach and the validity of the results gained with the novel non-destructive analysis approach.","PeriodicalId":244618,"journal":{"name":"2019 IEEE 21st Electronics Packaging Technology Conference (EPTC)","volume":"4 S1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 21st Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC47984.2019.9026672","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

As of today, various solutions to handle the dissipating heat of power electronics devices are available. These include the application of heatsinks, overmolding, embedding of components into substrates, use of substrates with embedded metal or ceramic heatsinks or liquid cooling approaches. When it comes to power electronics for high voltages and fast switching the parasitic capacity has to be considered. This parasitic capacity affects the electrical performance and may finally even lead to damage of the device. Embedding of metal heatsinks or mounting a substrate to a metal heatsink can even increase the parasitic capacity and hence, worsen the scenario. In this project a rectifier had to be built suitable for voltages of up to 20 kV and switching frequencies of 100 kHz while achieving a low parasitic capacity of max. 3 pF. High voltage diodes were selected to meet the electrical requirements. To fullfil both the thermal and capacitance demands the diodes were embedded into a substrate made from a highly thermal conductive FR4 material. In addition, the substrate is mounted to a ceramic heatsink to enable a superior cooling but to limit the parasitic capacity at the same time. This setup was characterised for its thermal management behaviour in the as build state. Though the lamination of the substrate to the ceramic heatsink showed some challenges its cooling performance could be assessed. Subsequently, the system without the ceramic heatsink was exposed to temperature shock cycles at −40/+125°C for up to 2,000 cycles to analyse the long term stability of the system behaviour. For the repeated investigation of the thermal behaviour and the structural integrity of the system a novel analysis approach using an infrared camera was applied. Cross sections were done in addition to verify the results from the novel thermal analysis approach. As of now no thermo-mechanical damage of the rectifier could be observed proving the ability of the embedding approach and the validity of the results gained with the novel non-destructive analysis approach.
高压应用中衬底嵌入式整流器的可靠性
到目前为止,有各种各样的解决方案来处理电力电子设备的散热。这些包括散热器的应用,覆盖成型,将组件嵌入基板,使用嵌入金属或陶瓷散热器或液体冷却方法的基板。当涉及到用于高压和快速开关的电力电子器件时,必须考虑寄生容量。这种寄生容量会影响电性能,最终甚至可能导致器件损坏。嵌入金属散热器或将基板安装到金属散热器上甚至会增加寄生容量,从而使情况恶化。在这个项目中,必须建立一个整流器,适用于高达20千伏的电压和100千赫的开关频率,同时实现最大的低寄生容量。选用高压二极管以满足电气要求。为了满足热和电容要求,二极管被嵌入到由高导热FR4材料制成的衬底中。此外,基板安装在陶瓷散热器上,以实现卓越的冷却,但同时限制了寄生容量。这种设置的特点是其热管理行为在作为构建状态。虽然基板与陶瓷散热器的层压存在一些挑战,但其冷却性能可以评估。随后,没有陶瓷散热器的系统暴露在−40/+125°C的温度冲击循环中,长达2000次循环,以分析系统行为的长期稳定性。为了对系统的热行为和结构完整性进行反复研究,采用了一种新的红外摄像机分析方法。为了验证新型热分析方法的结果,还进行了截面分析。到目前为止,还没有观察到整流器的热机械损伤,证明了嵌入方法的能力和新型无损分析方法所得结果的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信