High-frequency performance of GE high-density interconnect modules

T. Haller, B. Whitmore, P. Zabinski, B. Gilbert
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引用次数: 28

Abstract

An effort to determine the high-frequency electrical characteristics of the HDI (high-density interconnect) process and validate models and analytical tools is described. There were seven different designs fabricated, five with only passive structures and two with both passive and active structures. These coupons were designed with many different line structures in order to determine the electrical characteristics of HDI at high (>500-MHz) frequencies. A few of the structures used on the coupons and their respective electrical performances are discussed. The analytical tools derived from basic transmission line theory appear adequate to explain observed values of insertion loss, reflection loss, and crosstalk. In addition, the measurements confirmed the commonly accepted values for the electrical parameters of the GE HDI process (dielectric constant, loss tangent, and electrical resistivity). The crosstalk measurements demonstrate that sufficient isolation exists for practical system designs up to frequencies of 9 GHz in the stripline configuration, and even in the less-tolerant microstrip configuration good isolation is obtained without use of excessive spacing or guard conductors. The major limitation at the higher frequencies appears to be the insertion loss, which approaches 10 dB in some of the longer-length lines considered.<>
GE高密互连模块的高频性能
本文描述了确定HDI(高密度互连)过程的高频电特性并验证模型和分析工具的努力。他们制作了七种不同的设计,其中五种只有被动结构,两种既有被动结构又有主动结构。为了确定HDI在高(>500-MHz)频率下的电特性,设计了许多不同的线路结构。讨论了几种常用的结构及其各自的电气性能。从基本传输线理论推导出的分析工具似乎足以解释插入损耗、反射损耗和串扰的观测值。此外,测量结果证实了通用电气HDI工艺的电气参数(介电常数、损耗正切和电阻率)的普遍接受值。串扰测量表明,在带状线配置中,在频率高达9 GHz的实际系统设计中存在足够的隔离,即使在容限较低的微带配置中,也可以在不使用过大间距或保护导体的情况下获得良好的隔离。在较高频率下的主要限制似乎是插入损耗,在一些较长的线路中,插入损耗接近10 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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