The benefits of a flux-free atmosphere for wafer bump reflow

P. Lemieux, T. Tong, K. Brown
{"title":"The benefits of a flux-free atmosphere for wafer bump reflow","authors":"P. Lemieux, T. Tong, K. Brown","doi":"10.1109/IEMT.2003.1225924","DOIUrl":null,"url":null,"abstract":"There is constant pressure in semiconductor packaging to reduce costs while maintaining process yields. Wafer Level Packaging has increased in response to this pressure so that for the first time the packaging cost can remain constant despite the increasing number of die per wafer. The combination of shrinking pitch sizes and environmental regulations, causing materials changes, will make this even harder in the coming years. To keep costs down many wafer bump reflow processes use flux to reduce solder oxidation. However, the cost benefits of flux may not hold up when the total costs of the process are examined. We will examine using flux for wafer bump reflow including the impact on manufacturing and environmental considerations. The increased need for process cleanliness as it relates to flux and flux contamination will also be discussed. We will discuss alternatives to flux for oxide reduction. Specifically, Hydrogen atmosphere reflow will be examined including mechanism for oxide reduction and safety considerations. We will discuss the convergence of the needs for technology and cost reduction and form a conclusion on the best solutions to meet the needs of wafer bump reflow for leading technologists in the coming years.","PeriodicalId":106415,"journal":{"name":"IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.2003.1225924","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

There is constant pressure in semiconductor packaging to reduce costs while maintaining process yields. Wafer Level Packaging has increased in response to this pressure so that for the first time the packaging cost can remain constant despite the increasing number of die per wafer. The combination of shrinking pitch sizes and environmental regulations, causing materials changes, will make this even harder in the coming years. To keep costs down many wafer bump reflow processes use flux to reduce solder oxidation. However, the cost benefits of flux may not hold up when the total costs of the process are examined. We will examine using flux for wafer bump reflow including the impact on manufacturing and environmental considerations. The increased need for process cleanliness as it relates to flux and flux contamination will also be discussed. We will discuss alternatives to flux for oxide reduction. Specifically, Hydrogen atmosphere reflow will be examined including mechanism for oxide reduction and safety considerations. We will discuss the convergence of the needs for technology and cost reduction and form a conclusion on the best solutions to meet the needs of wafer bump reflow for leading technologists in the coming years.
无助熔剂气氛对圆片凹凸回流的好处
在半导体封装中,在保持制程产量的同时降低成本的压力一直存在。为了应对这种压力,晶圆级封装也有所增加,因此尽管每片晶圆上的芯片数量不断增加,封装成本仍首次保持不变。不断缩小的沥青尺寸和环境法规的结合,导致材料的变化,将使这在未来几年更加困难。为了降低成本,许多硅片凹凸回流工艺使用助焊剂来减少焊料氧化。然而,当检查该过程的总成本时,助熔剂的成本效益可能无法维持。我们将研究使用助焊剂进行晶圆凸点回流,包括对制造和环境的影响。还将讨论与助焊剂和助焊剂污染有关的工艺清洁度需求的增加。我们将讨论氧化物还原用助熔剂的替代品。具体来说,氢气大气回流将包括氧化还原机制和安全考虑进行研究。我们将讨论技术需求和降低成本的融合,并在未来几年为领先的技术人员提供满足晶圆凸点回流需求的最佳解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信