{"title":"ANSI/ESD S20.20 – The Next Generation","authors":"S. Duncan, J. Gibson, T. J. Kinnear","doi":"10.23919/EOS/ESD.2018.8509743","DOIUrl":null,"url":null,"abstract":"As IC technologies evolve in favor of faster IO speeds and increased package sizes, challenging constraints will be placed on future development of on chip ESD protection. Using ANSI/ESD S20.20 as a baseline, this paper will outline critical elements that factories of the future must consider to be successful.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EOS/ESD.2018.8509743","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
As IC technologies evolve in favor of faster IO speeds and increased package sizes, challenging constraints will be placed on future development of on chip ESD protection. Using ANSI/ESD S20.20 as a baseline, this paper will outline critical elements that factories of the future must consider to be successful.