Impacts of NBTI on SRAM array with power gating structure

Hao-I Yang, C. Chuang, W. Hwang
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引用次数: 1

Abstract

We have analyzed impacts of NBTI on power-gated SRAM arrays in terms of RSNM, WM, power, performance, and wake-up time. We also studied PMOS-type pre-charge circuit degradation, and compared two basic sensing amplifier structures when they were under NBTI stress. Our results indicated that VT drift of power switch degraded RSNM but improved WM in power-gated SRAM. Signal probability of unselected cells also impacted SRAM RSNM and WM. The leakage currents and virtual supply bounce were reduced, but wake-up time became longer. Longer precharge phase and judicious choice of sense amplifier structure would improve the tolerance to NBTI effects.
NBTI对功率门控结构SRAM阵列的影响
我们从RSNM、WM、功率、性能和唤醒时间等方面分析了NBTI对功率门控SRAM阵列的影响。我们还研究了pmos型预充电电路的退化,并比较了两种基本的传感放大器结构在NBTI应力下的性能。结果表明,功率开关的VT漂移降低了功率门控SRAM的RSNM,但提高了WM。未选择细胞的信号概率也影响SRAM RSNM和WM。泄漏电流和虚拟电源反弹减小,但唤醒时间变长。延长预充相位和合理选择感测放大器结构可以提高对NBTI效应的容忍度。
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