Y. Muraki, Y. Oniki, P. P. Gowda, E. Altamirano-Sanchez, H. Mertens, N. Horiguchi, F. Holsteyns, S. Kal, C. Alix, K. Kumar, A. Mosden, T. Hurd, N. Takahashi
{"title":"Highly selective isotropic chemical dry etching for gate-all-around devices: nanosheet, forksheet and complementary FETs","authors":"Y. Muraki, Y. Oniki, P. P. Gowda, E. Altamirano-Sanchez, H. Mertens, N. Horiguchi, F. Holsteyns, S. Kal, C. Alix, K. Kumar, A. Mosden, T. Hurd, N. Takahashi","doi":"10.1117/12.2613723","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":283821,"journal":{"name":"Advanced Etch Technology and Process Integration for Nanopatterning XI","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Etch Technology and Process Integration for Nanopatterning XI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2613723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}