BCD8sP: An advanced 0.16 μm technology platform with state of the art power devices

Abstract

Advanced 0.16 μm BCD technology platform offering dense logic transistors (1.8 V-5 V CMOS) and high performance analog features has been developed. Thanks to dedicated field plate optimization, body and drain engineering, state of the art power devices (8 V to 42 V rated) have been obtained ensuring large Safe Operating Areas with best RONXAREA-BVDSS tradeoff.