Fabrication of AlGaN/GaN HFET with a high breakdown voltage of over 1050 V

Abstract

We performed an AlGaN/GaN Schottky barrier diode (SBD) with a high breakdown voltage of over 1000V on Si (111) substrate. An AlGaN/GaN heterostructure without any crack was realized on a Si (111) substrate using a metalorganic chemical vapor deposition (MOCVD). We also fabricated an AlGaN/GaN heterojunction field effect transistor (HFET) using an AlGaN/GaN heterostructure on a Si (111) substrate. The fabrication process was the same as SBD. The gate length and width were 2000 nm and 0.4 mm, respectively. The distance of gate and drain was 15000 nm. The off-state breakdown voltage of the HFET was over 1050V