Multi-chip Stacking with Fine Pitch μbumps and TSVs for Heterogeneous Integration

Yangyang Yan, Guojun Wang, Hanqiang Su, Fengwei Dai, P. Sun, Liqiang Cao
{"title":"Multi-chip Stacking with Fine Pitch μbumps and TSVs for Heterogeneous Integration","authors":"Yangyang Yan, Guojun Wang, Hanqiang Su, Fengwei Dai, P. Sun, Liqiang Cao","doi":"10.1109/ICEPT50128.2020.9202456","DOIUrl":null,"url":null,"abstract":"Multichip stacking technique is becoming more and more essential for the development of advanced 3D heterogeneous systems with TSVs in the era of AI and 5G. Motivated by the desire to realize such future system integrations, we have developed an advanced multichip stacking prototype module which contains four dies stacking on an interposer with fine pitch copper pillar micro-bumps and TSVs. The minimum diameter and pitch of the micro-bumps employed was with 18μm and 30μm, respectively. While, the diameter and pitch of the TSVs employed was with 10μm and 100μm, respectively. The DC resistance of a long serial signal chain which transfers from the organic substrate to Die_3, then to Die_2, then to silicon interposer, then to Die1_1, then to Die1_2, and finally back to the organic substrate, was measured in the rage of 6~9Ω, indicating a good stacking uniformity. The proposed multichip stacking technique is expected to be applied to the development of future 3D heterogeneous integration applications.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT50128.2020.9202456","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Multichip stacking technique is becoming more and more essential for the development of advanced 3D heterogeneous systems with TSVs in the era of AI and 5G. Motivated by the desire to realize such future system integrations, we have developed an advanced multichip stacking prototype module which contains four dies stacking on an interposer with fine pitch copper pillar micro-bumps and TSVs. The minimum diameter and pitch of the micro-bumps employed was with 18μm and 30μm, respectively. While, the diameter and pitch of the TSVs employed was with 10μm and 100μm, respectively. The DC resistance of a long serial signal chain which transfers from the organic substrate to Die_3, then to Die_2, then to silicon interposer, then to Die1_1, then to Die1_2, and finally back to the organic substrate, was measured in the rage of 6~9Ω, indicating a good stacking uniformity. The proposed multichip stacking technique is expected to be applied to the development of future 3D heterogeneous integration applications.
基于小间距μ凸点的多芯片堆叠与tsv异质集成
在人工智能和5G时代,多芯片堆叠技术对于开发具有tsv的先进3D异构系统变得越来越重要。出于实现这种未来系统集成的愿望,我们开发了一种先进的多芯片堆叠原型模块,该模块包含四个芯片堆叠在具有细间距铜柱微凸点和tsv的中间层上。微凸点的最小直径为18μm,节距为30μm。所采用的tsv直径为10μm,节距为100μm。测量了从有机衬底到Die_3,再到Die_2,再到硅中间层,再到Die1_1,再到Die1_2,最后返回到有机衬底的长串信号链的直流电阻,其范围为6~9Ω,显示了良好的堆叠均匀性。所提出的多芯片堆叠技术有望应用于未来三维异构集成应用的发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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