A Landmark in Electrical Performance of IGBT Modules Utilizing Next Generation Chip Technologies

2006 IEEE International Symposium on Power Semiconductor Devices and IC's Pub Date : 2006-06-04 DOI:10.1109/ISPSD.2006.1666060

A. Kopta, M. Rammo, S. Eicher, U. Schlapbach

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引用次数: 16

Abstract

The aim of this work is to demonstrate that future high power IGBT modules will be capable of providing electrical performance not matched to date in terms of low losses, soft turn-off characteristics, square RBSOA, and full over-current and over-voltage self-protection mechanisms under fault conditions. First ever prototype modules were fabricated incorporating heavily paralleled 3300V chips employing the next generation enhanced-planar IGBT (EP-IGBT) technology and the field charge extraction diode (FCE) concept. In this paper, we show that the two technologies will provide the module with outstanding characteristics, therefore promising higher levels of performance in tomorrow's applications. In addition, we present a set of results where two 3300V IGBT modules were tested in parallel under extreme RBSOA conditions with a forced temperature difference of up to 100 degC. The modules were capable of turning off 6000A at a DC-link voltage of 2600V in spite of the temperature induced current mismatch and associated redistribution mechanisms

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利用下一代芯片技术的IGBT模块电气性能的里程碑

这项工作的目的是证明未来的高功率IGBT模块将能够在低损耗、软关断特性、方形RBSOA以及故障条件下的完整过流和过压自保护机制方面提供迄今为止无法匹配的电气性能。第一个原型模块是采用下一代增强型平面IGBT (EP-IGBT)技术和场电荷提取二极管(FCE)概念，采用高度并联的3300V芯片制造的。在本文中，我们展示了这两种技术将为该模块提供出色的特性，因此在未来的应用中有望实现更高水平的性能。此外，我们还展示了一组结果，其中两个3300V IGBT模块在极端RBSOA条件下并行测试，强制温差高达100℃。尽管存在温度感应电流失配和相关的再分配机制，但该模块能够在直流电压为2600V时关断6000A

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2006 IEEE International Symposium on Power Semiconductor Devices and IC's

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