Joem Stolle, Regis Poirier, Martin Froehle, Hermann Weindl, M. Naiman, V. Kriegerstein
{"title":"Fast Tera-Ohm Measurement Approach Using V93k AVI64 DC Scale Card","authors":"Joem Stolle, Regis Poirier, Martin Froehle, Hermann Weindl, M. Naiman, V. Kriegerstein","doi":"10.1109/ICMTS.2019.8730977","DOIUrl":null,"url":null,"abstract":"This paper describes a measurement approach for massive parallel testing enabling characterization of Mega-Ohm resistor and Giga-Ohm isolation structures for process characterization using low power test conditions with Advantest V93000 AVI64 equipment. Moreover, it exhibits the technique how to accomplish resistance readings up to single digit Tera-Ohms. Compared to a parametric benchmark tool, we are approx. 5x faster with sufficient accuracy and high repeatability. The new measurement methodology was applied for interconnect process characterization of an advanced CMOS technology.","PeriodicalId":333915,"journal":{"name":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2019.8730977","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper describes a measurement approach for massive parallel testing enabling characterization of Mega-Ohm resistor and Giga-Ohm isolation structures for process characterization using low power test conditions with Advantest V93000 AVI64 equipment. Moreover, it exhibits the technique how to accomplish resistance readings up to single digit Tera-Ohms. Compared to a parametric benchmark tool, we are approx. 5x faster with sufficient accuracy and high repeatability. The new measurement methodology was applied for interconnect process characterization of an advanced CMOS technology.