Bit line coupling memory tests for single-cell fails in SRAMs

Abstract

Due to the decreasing dimensions of manufactured devices, the effect of bit line capacitive coupling on the behavior of faulty memory cells cannot be ignored. Neighboring cells influence the faulty behavior of defective cells through coupling. This paper analyzes and validates this behavior theoretically and through electrical simulations. The paper evaluates the impact of bit line coupling in SRAMs on cell faulty behavior and identifies necessary conditions to induce worst-case coupling effects. We present a test that guarantees detecting all single-cell static faults in the presence of capacitive coupling and worst-case neighborhood data for any possible open defect.