Z2-FET: A zero-slope switching device with gate-controlled hysteresis

Abstract

We present a novel switching device named Z²-FET that features zero subthreshold swing and zero impact ionization. The device is built in fully-depleted silicon-on-insulator (FD-SOI) technology and is demonstrated to switch sharply with the subthreshold slope (SS) <; 1 mV/dec and an I_ON/I_OFF current ratio >; 10¹⁰. The device further shows large hysteresis in drain current-drain voltage (I_D-V_D) domain with the turn-on voltage (V_ON) linearly controlled by gate voltage (V_G). Simulation confirms that the operation of the device is determined by the positive feedback between the flow of carriers and their injection barriers.