Design for Manufacturability in Backend Reliability and Packaging of Nanoscale Technologies

Y. K. Lim, J.B. Tan, K. Pey, E. Chua, Y. H. Yeo, T. Fu, L. Hsia
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Abstract

Integration of copper (Cu) and low-k dielectrics has posed significant challenges for device reliability and packaging. For faster and successful semiconductor product introduction, early implementation of simulation model for physics and mechanical studies, and the subsequent design for manufacturability (DFM) are important considerations for device reliability and packaging communities. In this paper, several structural designs and finite element analysis (FEA) simulation models were employed to illustrate the importance of DFM in backend reliability and packaging. Also, its extendibility to future nanoscale technologies employing porous ultra low-k Cu interconnects was discussed.
纳米技术后端可靠性和封装中的可制造性设计
铜(Cu)和低k介电体的集成对器件可靠性和封装提出了重大挑战。为了更快、更成功地引入半导体产品,早期实施物理和机械研究仿真模型,以及随后的可制造性设计(DFM)是器件可靠性和封装社区的重要考虑因素。本文通过几个结构设计和有限元分析(FEA)仿真模型来说明DFM在后端可靠性和封装中的重要性。此外,还讨论了其在未来采用多孔超低钾铜互连的纳米级技术中的可扩展性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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