A Study of Center Field Stripe Yield Loss Mechanism

A. Maurya, M.J. Bin Manaf, Z. Abdul Rahman, Sim Jit-Shen, Cheng Soon Ong, Thung Beng Joo
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Abstract

Detection of killer defects is critical to improving yields in VLSI fabrication. Bright and dark-field inspection tools detect both killer and non-killer defects, and in some cases a high level of nuisance defects may adversely affect the ability to monitor and eliminate the real ones that have a detrimental impact on device yield. E-beam inspection tools take advantage of a phenomenon referred to as voltage contrast, and can differentiate between grounded and floating structures, thus detecting electrical killer defects. A particularly useful application of e-beam inspection is the detection of highly resistive or not-fully opened vias. Finding these types of failures with standard bright or dark-field inspection tools is extremely difficult, given the high aspect ratio and small width of typical vias. Figures showed the basic principle of e-beam analysis for vias. The sample is subjected to the analysis after via etch and barrier deposition. Vias that are fully open have good electrical connection to ground, and appear dark. Vias that are not properly open because of for example, residual dielectric material at the bottom, are electrically floating, and appear bright. This paper reports on a problem with one of the Silterra devices that suffered from sporadic cases of yield loss affecting dies on the center column of the 3times3 reticle field. Vertical stripes of failed dies would thus appear on the wafer sort maps. The failure bin (Bin 60) indicated a problem with the SRAM portion of the device. Based on the suspicion of a Vial problem, e-beam analysis was used to investigate via integrity. The motivation of this work was to find the root cause of the problem and implement a permanent solution
中心场条纹产量损失机理研究
致命缺陷的检测是提高超大规模集成电路制造成品率的关键。明暗视场检测工具可以检测致命缺陷和非致命缺陷,在某些情况下,高水平的有害缺陷可能会对监控和消除对设备良率产生有害影响的真正缺陷的能力产生不利影响。电子束检测工具利用一种被称为电压对比的现象,可以区分接地和浮动结构,从而检测电气致命缺陷。电子束检测的一个特别有用的应用是检测高电阻或未完全打开的通孔。考虑到典型通孔的高纵横比和小宽度,用标准的明暗视场检查工具发现这些类型的故障是非常困难的。图中显示了通孔电子束分析的基本原理。样品经过蚀刻和势垒沉积后进行分析。完全打开的过孔与地面有良好的电气连接,并且看起来很暗。例如,由于底部残留的介电材料而不能正确打开的过孔是带电漂浮的,并且看起来很亮。本文报道了西尔泰拉公司的一款器件在3倍3光圈中心柱上出现的零星产率损失影响模具的问题。因此,在晶圆分类图上就会出现失败晶圆的垂直条纹。故障bin (bin 60)表明设备的SRAM部分有问题。基于对小瓶问题的怀疑,采用电子束分析方法进行了完整性调查。这项工作的动机是找到问题的根本原因,并实施一个永久的解决方案
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