Optimization of electrical characteristics of Tunnel FET incorporating Gate Engineering

2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India) Pub Date : 2019-02-01 DOI:10.1109/MOS-AK.2019.8902361

Susmitha Kothapalli, Ullas Pandey, B. Bhowmick

引用次数: 0

Abstract

In this paper, the electrical characteristics of different structures of TFET including ferrorelectric gate have been studied. The devices have been optimized in order to provide the best values of SS in each device. The best result obtained for SS is 22mV/dec and for ION/IOFF ratio is 4.4×1013. Temperature dependence of each device has been plotted and compared.

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结合栅极工程的隧道场效应管电学特性优化

本文研究了包括铁电栅极在内的不同结构的TFET的电学特性。为了在每个器件中提供最佳的SS值，对器件进行了优化。SS的最佳结果为22mV/dec, ION/IOFF比为4.4×1013。对每个器件的温度依赖性进行了绘制和比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India)

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