Volcano-shaped field emitters for large area displays

Abstract

Individual and groups of 3/spl times/3 and 10/spl times/10 gated volcano-shaped field emitters have been processed with gate dimensions of 4, 8, 14, 25 and 50 /spl mu/m and gate-to-emitter rim distances of 1.0 and 0.25 /spl mu/m. The 0.25 /spl mu/m devices are fabricated with a stepped oxide process which does not increase the gate-to-emitter capacitance significantly. Turn-on voltages range from 80-90 V for the 0.25 /spl mu/m devices and are about 250 V for the 1.0 /spl mu/m devices. I-V characteristics will be presented as well as an integration scheme for the formation of matrix-addressable arrays for field emitter display (FED) applications.