A. Falepin, T. Janssens, S. Severi, W. Vandervorst, S. Felch, V. Parihar, A. Mayur
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引用次数: 4
Abstract
Since the requirements for the S/D extensions for future devices become more and more severe with respect to activation and vertical abruptness, a huge effort has been done to develop ultra-fast annealing techniques such as laser annealing. Due to the fact that only the surface layers are heated, the Si wafer serves as a heat sink. Hence, extremely fast cooling rates can be obtained resulting in a high activation and limited diffusion of the dopants. We present a preliminary study on the activation of n- and p-type junction implants by sub-melt laser annealing. The influence of the pre-amorphization depth, the laser annealing temperature and other process parameters on the activation has been investigated. Sheet resistance and junction depth measurements reveal good activation with minimal diffusion