Ultra shallow junctions formed by sub-melt laser annealing

A. Falepin, T. Janssens, S. Severi, W. Vandervorst, S. Felch, V. Parihar, A. Mayur
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引用次数: 4

Abstract

Since the requirements for the S/D extensions for future devices become more and more severe with respect to activation and vertical abruptness, a huge effort has been done to develop ultra-fast annealing techniques such as laser annealing. Due to the fact that only the surface layers are heated, the Si wafer serves as a heat sink. Hence, extremely fast cooling rates can be obtained resulting in a high activation and limited diffusion of the dopants. We present a preliminary study on the activation of n- and p-type junction implants by sub-melt laser annealing. The influence of the pre-amorphization depth, the laser annealing temperature and other process parameters on the activation has been investigated. Sheet resistance and junction depth measurements reveal good activation with minimal diffusion
亚熔体激光退火形成的超浅结
由于对未来设备的S/D扩展的要求在激活和垂直陡度方面变得越来越严格,人们已经付出了巨大的努力来开发超快速退火技术,如激光退火。由于只有表面层被加热,硅晶片起到了散热的作用。因此,可以获得极快的冷却速率,从而导致掺杂剂的高活化和有限的扩散。本文对n型和p型结植入物的亚熔体激光退火活化进行了初步研究。研究了预非晶化深度、激光退火温度等工艺参数对活化的影响。薄片电阻和结深度的测量显示了良好的活化和最小的扩散
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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