Self-heating effect in lateral DMOS on SOI

Abstract

The self-heating effect in an SOI LDMOS device, originating from the low thermal conductance of the buried silicon dioxide, was investigated under steady-state conditions. It is found that the temperature increase inside a device built in a 1 /spl mu/m silicon over 2 /spl mu/m buried oxide can be as high as 40/spl deg/C at a power level of 3 W/mm/sup 2/. The effective thermal resistances of the devices are found to increase with buried oxide thickness and decrease with silicon thickness. Two-dimensional thermal simulations with device simulator MEDICI are performed and the results are consistent with the experiments.