Wafer Level Packaging of GaN/Si SAW Band Pass Filters with Operating Frequencies Above 5 GHz

A. Bunea, D. Neculoiu, A. Dinescu
{"title":"Wafer Level Packaging of GaN/Si SAW Band Pass Filters with Operating Frequencies Above 5 GHz","authors":"A. Bunea, D. Neculoiu, A. Dinescu","doi":"10.1109/smicnd.2018.8539748","DOIUrl":null,"url":null,"abstract":"This paper proposes a quasi-wafer level packaging approach of surface acoustic wave band pass filters (SAW-BPF) with operating frequencies above 5 GHz. A Poly(methyl methacrylate) (PMMA) cap is designed, fabricated and glued using an epoxy resin directly on the GaN/Si chip. First a coplanar waveguide transmission line is packaged and measured up to 65 GHz. Results show additional insertion losses of only 0.1 dB up to millimeter wave frequencies. A 5.6 GHz SAW-BPF is then packaged using the same approach. Measurement results show excellent properties of the packaged device for a temperature range between −150 … + 150°C.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/smicnd.2018.8539748","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper proposes a quasi-wafer level packaging approach of surface acoustic wave band pass filters (SAW-BPF) with operating frequencies above 5 GHz. A Poly(methyl methacrylate) (PMMA) cap is designed, fabricated and glued using an epoxy resin directly on the GaN/Si chip. First a coplanar waveguide transmission line is packaged and measured up to 65 GHz. Results show additional insertion losses of only 0.1 dB up to millimeter wave frequencies. A 5.6 GHz SAW-BPF is then packaged using the same approach. Measurement results show excellent properties of the packaged device for a temperature range between −150 … + 150°C.
工作频率高于5 GHz的GaN/Si SAW带通滤波器的晶圆级封装
提出了一种工作频率在5ghz以上的表面声波带通滤波器(SAW-BPF)的准晶片级封装方法。使用环氧树脂直接在GaN/Si芯片上设计,制造和粘接聚甲基丙烯酸甲酯(PMMA)帽。首先,共面波导传输线被封装并测量至65 GHz。结果表明,在毫米波频率下,额外的插入损耗仅为0.1 dB。然后使用相同的方法封装5.6 GHz SAW-BPF。测量结果表明,封装器件在−150…+ 150°C的温度范围内具有优异的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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