Investigation of hysteresis memory effects in SOI FinFETs with ONO buried insulator

Abstract

Advanced FinFETs fabricated on SOI with ONO BOX are investigated for possible memory applications. Systematic measurements reveal the dynamics of BOX charging and discharging as a function of bias, dimensions, and time. The amount of charge trapped into the ONO dielectric is sensed, via 2D coupling, by the drain current. A strong hysteresis effect, potentially useful for non-volatile memory applications, is observed and discussed.