P-channel Schottky barrier nanowire SONOS memory with low-voltage operations and excellent reliability

Abstract

An ultralow voltage p-channel Schottky barrier nanowire SONOS memory is reported experimentally with excellent reliability. By applying pure metallic Schottky barrier S/D, the nanowire SONOS memory can operate at a gate voltage of -7V to -11V for hole programming, and 5V to 7V for electron erasing. This Schottky barrier cell exhibits superior 10K cycling and 125°C retention for practical applications.