{"title":"Si/SiGe high-speed field-effect transistors","authors":"K. Ismail","doi":"10.1109/IEDM.1995.499249","DOIUrl":null,"url":null,"abstract":"We review the current status of Si/SiGe n- and p-type MODFETs with an emphasis on their microwave performance. A comparison with state-of-the-art Si technology is given, and the potential use of Si/SiGe devices in complementary logic is pointed out.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"120 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"44","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499249","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 44
Abstract
We review the current status of Si/SiGe n- and p-type MODFETs with an emphasis on their microwave performance. A comparison with state-of-the-art Si technology is given, and the potential use of Si/SiGe devices in complementary logic is pointed out.