An empirical reliability prediction method for 1.55 /spl mu/m InGaAs/InP MQW-DFB laser diodes

1997 Proceedings 47th Electronic Components and Technology Conference Pub Date : 1997-05-18 DOI:10.1109/ECTC.1997.606338

N. Hwang, S. Kang, H. Lee, Seong-Su Park, Min-Kyu Song, K. Pyun

引用次数: 1

Abstract

An empirical method for lifetime projection of 1.55 /spl mu/m InGaAs/InP MQW-DFB laser diodes (LD) is presented. On the basis of experimental results of accelerated aging test for 1500 hours, relationship between LD degradation, operating voltage, and ambient temperature has been determined. The presented method makes it possible to predict the lifetime of LDs by determining the thermal voltage ratio.

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1.55 /spl mu/m InGaAs/InP MQW-DFB激光二极管可靠性的经验预测方法

提出了1.55 /spl μ m InGaAs/InP MQW-DFB激光二极管(LD)寿命投影的经验方法。在1500小时加速老化试验的基础上，确定了LD降解与工作电压、环境温度之间的关系。该方法可以通过确定热电压比来预测lcd的寿命。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1997 Proceedings 47th Electronic Components and Technology Conference

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