The Gate Current in MOSFETs Versus Planar-NOI Devices

C. Ravariu, E. Manea, C. Parvulescu, F. Babarada, A. Popescu, Avireni Srinivasulu
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引用次数: 4

Abstract

Recently reported, the Nothing On Insulator (NOI) device is based on the tunneling through a ultra-thin insulator placed between two semiconductors. A direct implementation of the NOI transistor that requires a vertical cavity etching in Si of 2nm width is a difficult technological task. Therefore, this paper proposes a simpler structure, based on the planar Si-technology. Rotating the NOI structure by 90°, the width of the cavity becomes the thickness of the cavity. If the vacuum is replaced by oxide, results a MOS capacitor without lateral junction but with lateral drain that is called p-NOI (planar-NOI variant). The p-NOI structure is simulated in Atlas and the results are compared with measured currents through the gate of fabricated MOSFETs. The main conduction mechanism is Fowler-Nordheim and secondary is quantum tunneling. The tunneling currents of the p-NOI structures obeys to the exponential law and are similar to the gate MOSFET currents. The currents are dominated by the insulator thickness and the gate voltage.
mosfet与平面noi器件的栅极电流
最近有报道称,无绝缘体(NOI)装置是基于穿过放置在两个半导体之间的超薄绝缘体的隧道。直接实现NOI晶体管需要在2nm宽度的Si上进行垂直腔蚀刻是一项困难的技术任务。因此,本文提出了一种基于平面硅技术的简单结构。将NOI结构旋转90°,腔的宽度变为腔的厚度。如果真空被氧化物取代,结果是MOS电容器没有侧结,但有侧漏,称为p-NOI(平面noi变体)。在Atlas中模拟了p-NOI结构,并将结果与通过栅极的测量电流进行了比较。主要的传导机制是Fowler-Nordheim,其次是量子隧穿。p-NOI结构的隧穿电流服从指数定律,与栅极MOSFET电流相似。电流由绝缘体厚度和栅极电压决定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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