Boron carbon nitride film containing hydrogen for 2nm node low-k interconnection

Abstract

We have investigated the properties of boron carbon nitride containing hydrogen (BCNH) film deposited by using tris (dimethylamino)boron (TMAB) gas. The dielectric constant (k) of the BCNH film was achieved as low as 1.8 by deposition with a low RP power (10W). The film has a sufficient Young's modulus as high as 26 GPa. In addition, k-value of BCNH film is more stable compared with conventional BCN film.