BTI lifetime reliability of planar MOSFET versus FinFET for 16 nm technology node

Abstract

As FinFET pushes to replace planar MOSFET, concern rises about its reliability. This research detects the more robust technology against BTI aging degradation, through investigating its effect at the device level: using an adequate BTI Reaction Diffusion model, and at the circuit level for 16nm nodes. FinFET proves to be more robust, as its delay due to BTI is lower by 26% compared to planar MOSFET.