Rumeng Wang, Jinge Li, C. Shi, Jinghong Chen, Runxi Zhang
{"title":"A 25–37GHz VCO Employing Stacked-Coupled Switched Inductor and Co-Tuned Buffer in 55nm CMOS for Multi-Band 5G mmW Applications","authors":"Rumeng Wang, Jinge Li, C. Shi, Jinghong Chen, Runxi Zhang","doi":"10.1109/SiRF51851.2021.9383369","DOIUrl":null,"url":null,"abstract":"This paper presents a mmW voltage-controlled oscillator (VCO) employing stacked-coupled switched differential inductor (SSDI) and hybrid analog-digital varactor array (HVA) to simultaneously achieve wide tuning range and low phase noise. A frequency co-tuned VCO buffer is also developed to minimize the VCO output power variation. Fabricated in a 55-nm CMOS process, the VCO achieves an ultra-wide frequency tuning range of 41.14% (24.48 to 37.16 GHz) and a low phase noise of -124.91 dBc/Hz at 10 MHz offset. The FoMT is -192.67 dBc/Hz and the output power variation is less than 3 dB over the entire tuning range.","PeriodicalId":166842,"journal":{"name":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiRF51851.2021.9383369","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a mmW voltage-controlled oscillator (VCO) employing stacked-coupled switched differential inductor (SSDI) and hybrid analog-digital varactor array (HVA) to simultaneously achieve wide tuning range and low phase noise. A frequency co-tuned VCO buffer is also developed to minimize the VCO output power variation. Fabricated in a 55-nm CMOS process, the VCO achieves an ultra-wide frequency tuning range of 41.14% (24.48 to 37.16 GHz) and a low phase noise of -124.91 dBc/Hz at 10 MHz offset. The FoMT is -192.67 dBc/Hz and the output power variation is less than 3 dB over the entire tuning range.