Memory repair for high defect densities

M. Nicolaidis, P. Papavramidou
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引用次数: 1

Abstract

We illustrate that memory repair for high defect densities allows improving yield, extending circuit life, reducing power, and improving reliability, and can be used to push aggressively the limits of technology scaling. Then we present several developments enabling low-cost memory repair for high defect densities, which alllow realising this promise.
高缺陷密度的记忆修复
我们说明了高缺陷密度的存储器修复可以提高成品率,延长电路寿命,降低功耗,提高可靠性,并可用于积极推动技术扩展的限制。然后,我们提出了几个能够实现高缺陷密度低成本记忆修复的发展,这使得实现这一承诺成为可能。
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