A Ferroelectric BEoL Module: Adding Non-Volatile Memories and Varactors to Existing Technology Nodes

Abstract

In this paper we show the potential of further device functionalization in interconnect layers on established technologies by implementing innovative ferroelectric films based on CMOS-compatible hafnium zirconium oxide (HZO). Thus, offering new opportunities for advanced system on chip solutions with reduced integration complexity and low technology cost adder. Based on the example of implemented ferroelectric capacitors in the BEoL of XFAB’s XT018 technology we demonstrate on the same wafer the versatility of such ferroelectric capacitors for the application as memory bitcell and varactor device.