Mutiphysics study of RF/microwave planar devices: Effect of the input signal power

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2014-04-07 DOI:10.1109/EUROSIME.2014.6813816

M. Sánchez-Soriano, Michael Edwards, Y. Quéré, D. Andersson, S. Cadiou, C. Quendo

{"title":"Mutiphysics study of RF/microwave planar devices: Effect of the input signal power","authors":"M. Sánchez-Soriano, Michael Edwards, Y. Quéré, D. Andersson, S. Cadiou, C. Quendo","doi":"10.1109/EUROSIME.2014.6813816","DOIUrl":null,"url":null,"abstract":"In this paper, the effects of the input signal power on microwave planar devices are studied in detail. In this context, a complete multiphysics study is performed, involving the electro-thermo-mechanical coupling in microwave components. For this study, a multiphysics simulator is used. As shown, for moderate input powers, the device transfer function can be altered, mainly in terms of an increase of losses and a frequency shift. Additionally, hot spots are to be appeared, whose location is related to the electromagnetic field distribution of the passive device under test. Guidelines are also provided to estimate the average power handling capability (APHC) of planar components. As an example, the multiphysics analysis of a microstrip coupled-line filter centered at 42 GHz is tackled taken into account different thermal and mechanical boundary conditions.","PeriodicalId":359430,"journal":{"name":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUROSIME.2014.6813816","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 15

Abstract

In this paper, the effects of the input signal power on microwave planar devices are studied in detail. In this context, a complete multiphysics study is performed, involving the electro-thermo-mechanical coupling in microwave components. For this study, a multiphysics simulator is used. As shown, for moderate input powers, the device transfer function can be altered, mainly in terms of an increase of losses and a frequency shift. Additionally, hot spots are to be appeared, whose location is related to the electromagnetic field distribution of the passive device under test. Guidelines are also provided to estimate the average power handling capability (APHC) of planar components. As an example, the multiphysics analysis of a microstrip coupled-line filter centered at 42 GHz is tackled taken into account different thermal and mechanical boundary conditions.

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射频/微波平面器件的多物理场研究:输入信号功率的影响

本文详细研究了输入信号功率对微波平面器件的影响。在此背景下，进行了一个完整的多物理场研究，涉及微波元件的电-热-机械耦合。本研究使用了多物理场模拟器。如图所示，对于中等输入功率，可以改变器件传递函数，主要表现为损耗的增加和频移。另外，会出现热点，热点的位置与被测无源器件的电磁场分布有关。给出了平面元件平均功率处理能力(APHC)的估计准则。以42 GHz为中心的微带耦合线滤波器为例，考虑了不同的热学和力学边界条件，进行了多物理场分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

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