A dynamic/static SRAM power management scheme for DVFS and AVS in advanced automotive infotainment SoCs

K. Nii, M. Yabuuchi, Y. Ishii, Miki Tanaka, M. Igarashi, K. Fukuoka, S. Tanaka
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引用次数: 1

Abstract

An embedded SRAM power management scheme using 16 nm FinFET technology is demonstrated in automotive infotainment SoCs. By introducing write-assist circuit technique, SRAM can operate down to 0.5 V wide voltage range, achieving DVFS for efficient power saving. Fast resume standby mode is also developed for reducing the leakage power of L1 cache under 2 GHz CPU operation. We confirmed that proposed thermal control scheme can be protected by thermal runaway failure.
先进汽车信息娱乐soc中用于DVFS和AVS的动态/静态SRAM电源管理方案
采用16纳米FinFET技术的嵌入式SRAM电源管理方案在汽车信息娱乐soc中得到了演示。通过引入写辅助电路技术,SRAM可以在低至0.5 V的宽电压范围内工作,实现了高效节能的DVFS。为了降低L1高速缓存在2 GHz CPU工作下的泄漏功率,还开发了快速恢复待机模式。我们证实了所提出的热控制方案可以免受热失控失效的保护。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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