Comparative analysis of oxides to improve performance of DC-MOS-HEMTs

Abstract

AlGaN/GaN High Electron Mobility Transistors (HEMTs) are considered as good candidate for high power and high speed applications. In this paper, a simulation study has been done to investigate the effect of different gate oxides on double channel DC-MOS-HEMTs (Double Channel Metal Oxide Semiconductor HEMTs). The impact of oxide thickness on performance of DC-MOS-HEMT has also been performed. The impact of change in oxide thickness has been analyzed for cut off frequency, maximum frequency, current gain, power gain and transconductance. HfO2 shows good pinchoff, high current gain = 57.3 dB, high unilateral power gain = 65.8 dB and highest transconductance of 757 mS/mm.